Pontšo ea Theknoloji ea ho Sila 2025 Japane
Theknoloji ea ho Sila Japane 2025
Henan Boreas New Material Co., Ltd.
TheTheknoloji ea ho Sila Japane (GTJ) 2025, e tšoeroeng ho tloha hoLa 5–7 Tlhakubele, 2025, hoSebaka sa Likopano tsa Machaba sa Makuhari MesseSeterekeng sa Chiba, e tiisitse botumo ba eona e le ketsahalo e ka sehloohong ea Asia bakeng sa mahlale a tsoetseng pele a ho sila le ho bentša. Pontšo ena e shebane le ho sebetsa ka mokhoa o nepahetseng haholo, ho iketsetsa lintho ka bohona le boqapi bo tsoetseng pele, e hohetse batho ba fetangBatšoantšisi ba 300leBaeti ba litsebi ba 15,000ho tsoa indastering ea semiconductor, likoloi le thepa e tsoetseng pele
Ketsahalo ena e totobalitse tsoelo-pele ea bohlokoa hoSiC (kharbide ea silicon)leGaN (gallium nitride)ho sebetsana le wafer, ho tsamaisana le boetapele ba Japane tlhahisong ea li-semiconductor. Lihlopha tsa bohlokoa tsa lihlahisoa li ne li kenyelletsa mechine ea ho sila, li-abrasives, lisebelisoa tsa taemane, maro a ho bentša le litsamaiso tsa ho lekanya ka nepo, ka ho hatisa ka matla litharollo bakeng sa ho qeta bokaholimo bo boreleli haholo le katleho ea ts'ebetso.
Ho Kena ha Boreas: Booth G108
Boreas, moqapi oa lefats'e ka bophara oa litharollo tse tsoetseng pele tsa ho khohlela, e bontšitse lihlahisoa tsa eona tse hlahelletseng—phofo e nyane ea taemanelemarotholi a taemane a sebetsang hantle—hoBooth G108Litharollo tsena li entsoe ho sebetsana le litlhoko tse thata tsa ts'ebetso ea substrate ea SiC le GaN, li fana ka ho nepahala ho sa bapisoeng le botsitso bakeng sa lits'ebetso tsa bohlokoa tsa lisebelisoa tsa elektroniki tsa motlakase le optoelectron.
Lintlha-khōlō tsa Sehlahisoa le Tšusumetso ea 'Maraka
- Liphofo tse nyane tsa taemane:
Liphofo tse nyane tsa taemane tsa Boreas tse tšoanang hantle li etselitsoeCMP (ho rala ha mechine ea lik'hemik'hale)leho sila ka ho nepahala haholoea li-wafer tsa SiC. Kabo ea tsona ea likaroloana tsa submicron e netefatsa liphoso tse fokolang tsa bokaholimo le sekhahla se phahameng sa chai, e leng monyetla oa bohlokoa bakeng sa bahlahisi ba shebaneng le limmaraka tsa likoloi tsa motlakase tsa moloko o latelang (EV) le limmaraka tsa semiconductor tsa 5G.- Li-slurries tse Ikhethileng tsa Taemane:
Metsi a k'hamphani a sireletsang tikoloho le a mafura a mangata a bontšitse ntlafatso e kholo ho qhaleng mocheso le ho tšoarella ha lisebelisoa nakong ea lits'ebetso tsa ho bentša tsa GaN. Tlhahiso ena e tsamaisana le mekhoa ea indasteri e lebisang melaeng ea tlhahiso e tsitsitseng le e nang le tlhahiso e phahameng.Ho Sheba Pele
Katleho ea Boreas ho GTJ 2025 e totobatsa boitlamo ba eona ba ho ntšetsa pele mahlale a tlhahiso ea li-semiconductor. Ha indasteri e ntse e fetohela ho amoheloeng ha SiC le GaN ka bophara, k'hamphani e rera ho atolosa matsete a eona a R&D le ho sebelisana le baetapele ba lefats'e ho ntlafatsa litharollo tsa ho sila tsa moloko o latelang.Kena Phetohelong ea Precision
Bakeng sa lintlha tse ling mabapi le phofo e nyane ea taemane ea Boreas le slurry ea taemane, ikopanye le sehlopha sa rona ho hlahloba kamoo boqapi ba rona bo ka phahamisang lits'ebetso tsa hau tsa tlhahiso.
- Li-slurries tse Ikhethileng tsa Taemane:
Mantsoe a bohlokoa: Theknoloji ea ho Sila Japane 2025, Boreas, phofo e nyane ea taemane, slurry ea taemane, ho bentša ha wafer ea SiC, ho sila ha substrate ea GaN, CMP, tlhahiso ea semiconductor, GTJ 2025